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1 materials

Property Gallium nitride, hexagonal phase (GaN)
ideal computational crystal | periodic bulk crystal model
Density
5942 kg/m^3
Density
Computed
JARVIS-DFT ideal hexagonal crystal, space group P6_3mc (No. 186), static relaxed structure.
Thermal conductivity
Not listed
Not listed for this material record, condition, or selected unit system.
Specific heat capacity
Not listed
Not listed for this material record, condition, or selected unit system.
Young's modulus
269.4916986925976 GPa
Young's modulus
Derived Computed
JARVIS-DFT ideal hexagonal crystal, space group P6_3mc (No. 186), static relaxed structure. Isotropic value derived from the upstream Voigt K and G.
Shear modulus
107.88 GPa
Shear modulus
Computed
JARVIS-DFT ideal hexagonal crystal, space group P6_3mc (No. 186), static relaxed structure. Voigt elastic average.
Poisson's ratio
0.25 -
Poisson's ratio
Computed
JARVIS-DFT ideal hexagonal crystal, space group P6_3mc (No. 186), static relaxed structure. Upstream JARVIS value.
Yield strength
Not listed
Not listed for this material record, condition, or selected unit system.
Tensile strength
Not listed
Not listed for this material record, condition, or selected unit system.
Elongation at break
Not listed
Not listed for this material record, condition, or selected unit system.
Maximum service temperature
Not listed
Not listed for this material record, condition, or selected unit system.